? 2017 ixys corporation, all rights reserved ds100781(1/17) n-channel enhancement mode IXTP12N70X2M v dss = 700v i d25 = 12a r ds(on) ? ? ? ? ? 300m ? ? ? ? ? features ? international standard package ? plastic overmolded tab ? low r ds(on) and q g ? avalanche rated ? low package inductance advantages ? high power density ? easy to mount ? space savings applications ? switch-mode and resonant-mode power supplies ? dc-dc converters ? pfc circuits ? ac and dc motor drives ? robotics and servo controls symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 700 v v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 v i gss v gs = ? 30v, v ds = 0v ??????????????????????? 100 na i dss v ds = v dss , v gs = 0v 5 ? a t j = 125 ? c 50 ? a r ds(on) v gs = 10v, i d = 6a, note 1 300 m ? symbol test conditions maximum ratings v dss t j = 25 ? c to 150 ? c 700 v v dgr t j = 25 ? c to 150 ? c, r gs = 1m ? 700 v v gss continuous ? 30 v v gsm transient ? 40 v i d25 t c = 25 ? c, limited by t jm 12 a i dm t c = 25 ? c, pulse width limited by t jm 24 a i a t c = 25 ? c6a e as t c = 25 ? c 300 mj dv/dt i s ? i dm , v dd ? v dss , t j ? 150c 50 v/ns p d t c = 25 ? c40w t j -55 ... +150 ? c t jm 150 ? c t stg -55 ... +150 ? c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13 / 10 nm/lb.in weight 2.5 g g = gate d = drain s = source overmolded to-220 g d s (electrically isolated tab) advance technical information x2-class power mosfet
ixys reserves the right to change limits, test conditions, and dimensions. IXTP12N70X2M note 1. pulse test, t ? 300 ? s, duty cycle, d ?? 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065b1 6,683,344 6,727,585 7,005,734b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123b1 6,534,343 6,710,405b2 6,759,692 7,063,975b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728b1 6,583,505 6,710,463 6,771,478b2 7,071,537 source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max i s v gs = 0v 12 a i sm repetitive, pulse width limited by t jm 48 a v sd i f = i s , v gs = 0v, note 1 1.4 v t rr 270 ns q rm 2.8 ???????????? c i rm 21 a i f = 6a, -di/dt = 100a/ s v r = 100v symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max g fs v ds = 10v, i d = 6a, note 1 7 12 s r gi gate input resistance 3.7 ? c iss 960 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 920 pf c rss 2 pf c o(er) 58 pf c o(tr) 200 pf t d(on) 24 ns t r 30 ns t d(off) 78 ns t f 27 ns q g(on) 19 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 6a 5 nc q gd 8 nc r thjc 3.10 ? c/w r thcs 0.50 ? c/w resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 6a r g = 30 ? (external) effective output capacitance energy related time related v gs = 0v v ds = 0.8 ? v dss terminals: 1 - gate 2 - drain 3 - source 12 3 overmolded to-220 (ixtp...m) advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2017 ixys corporation, all rights reserved IXTP12N70X2M fig. 1. output characteristics @ t j = 25oc 0 2 4 6 8 10 12 00.511.522.533.54 v ds - volts i d - amperes v gs = 10v 8v 5v 6v 7v fig. 3. output characteristics @ t j = 125oc 0 2 4 6 8 10 12 012345678910 v ds - volts i d - amperes v gs = 10v 7v 4v 5v 6v fig. 4. r ds(on) normalized to i d = 6a value vs. junction temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 12a i d = 6a fig. 2. extended output characteristics @ t j = 25oc 0 4 8 12 16 20 24 28 32 0 5 10 15 20 25 v ds - volts i d - amperes v gs = 10v 8v 6v 5v 7v fig. 5. r ds(on) normalized to i d = 6a value vs. drain current 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5 10 15 20 25 30 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. normalized breakdown & threshold voltages vs. junction temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 -60 -40 -20 0 20 40 60 80 100 120 140 160 t j - degrees centigrade bv dss / v gs(th) - normalized bv dss v gs(th)
ixys reserves the right to change limits, test conditions, and dimensions. IXTP12N70X2M fig. 11. capacitance 0.1 1 10 100 1000 10000 1 10 100 1000 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 12. output capacitance stored energy 0 2 4 6 8 10 12 14 16 0 100 200 300 400 500 600 700 v ds - volts e oss - microjoules fig. 8. transconductance 0 4 8 12 16 20 24 02468101214161820 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 0 2 4 6 8 101214161820 q g - nanocoulombs v gs - volts v ds = 350v i d = 6a i g = 10ma fig. 7. input admittance 0 2 4 6 8 10 12 14 16 18 20 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc
? 2017 ixys corporation, all rights reserved ixys ref: t_12n70x2(x3-s602) 1-19-17 IXTP12N70X2M fig. 13. forward-bias safe operating area 0.01 0.1 1 10 100 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc sin g le pulse 1ms 100 s r ds( on ) limit 10ms dc fig. 14. maximum transient thermal impedance 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width - seconds z (th)jc - k / w
|
